PART |
Description |
Maker |
MC100LVEL38 MC100LVEL38DW MC100EL38 MC100EL38DW ON |
, /6 Clock Generation Chip 2, 4/6 Clock Generation Chip From old datasheet system ±2, ±4/6 Clock Generation Chip
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Motorola, Inc ONSEMI[ON Semiconductor]
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GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
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Toshiba, Corp.
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APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 25A
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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APT15GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 31A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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APT15GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 30A
|
ADPOW[Advanced Power Technology]
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APT60GT60JRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology
|
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
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http:// STMicroelectronics
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APT60GT60JR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
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APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
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Advanced Power Technology, Ltd.
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STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
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APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
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ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
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STW21NM50N STF21NM50N STB21NM50N-1 STP21NM50N STP2 |
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET
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STMicroelectronics
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